<http://webisa.webdatacommons.org/244494026>	<http://www.w3.org/ns/prov#value>	"FIG. 11A is a plan view showing a semiconductor device according to the fifth embodiment of the present invention, and FIG. 11B is a sectional view taken along the line XIB--XIB of FIG. 11A. The basic structure of this embodiment is the same as that of the fourth embodiment except that an electrode of an emitter 33 is connected from under an insulting film 32." .
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<http://webisa.webdatacommons.org/prov/250973366>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/244494026> .
<http://webisa.webdatacommons.org/244494026>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .