. . . "FIG. 11A is a plan view showing the structures of the third and fourth resist patterns 23 180 and 24 180 which are formed on the predetermined substrate 20 when the phase shift mask 2 is positioned at the exposure mask positions Fm1 and Fm2, and FIG. 11B is a sectional view showing the structures of the third and fourth resist patterns 23 180 and 24 180 taken along a line VI???VI??? shown in FIG." .