<http://webisa.webdatacommons.org/prov/134366761>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/255755528> .
<http://webisa.webdatacommons.org/255755528>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.co.uk> .
<http://webisa.webdatacommons.org/prov/142695061>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/255755528> .
<http://webisa.webdatacommons.org/255755528>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/145117061>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/255755528> .
<http://webisa.webdatacommons.org/255755528>	<http://www.w3.org/ns/prov#value>	"Accordingly, for continued improvement in the structure and operation of SiC-based bipolar and other devices it may be desirable to provide continued improvement in the underlying substrates and their crystal structures." .