. "FIG. 11A is a plan view showing one of the main steps of manufacturing a nonvolatile semiconductor memory according to the embodiment of the present invention, FIG. 11B is a sectional view taken along the line 11B-11B in FIG. 11A, FIG. 11C is a sectional view taken along the line 11C-11C in FIG. 11A, FIG. 11D is a sectional view taken along the line 11D-11D in FIG. 11A, and FIG. 11E is a sectional" . . .