<http://webisa.webdatacommons.org/265892026>	<http://www.w3.org/ns/prov#value>	"nity of the electrode larger than the plug electrode area, as well as a manufacturing method thereof. (45) A semiconductor integrated circuit device as described in each of items (1) to (44), wherein the concentration of antimony in the chalcogenide film near the underlying plug electrode is made higher than that in the portion other than the rewriting region and in the vicinity of the electrode," .
<http://webisa.webdatacommons.org/265892026>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.es> .
<http://webisa.webdatacommons.org/prov/441197617>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/265892026> .
<http://webisa.webdatacommons.org/265892026>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .