. . "In the embodiment of FIGS. 7A and 7B, the doping profile of the well region 320 and the gate region 410, in conjunction with the spacing between the drain region 715 and the gate region 410 edge (with or without field oxide) make the high-voltage JFET 300 to have a minimum breakdown voltage of about 110V. Turning now to FIGS. 8A and 8B, illustrated are a plan view and a cross-sectional view, respe" . . .