<http://webisa.webdatacommons.org/268832028>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/236276422>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/268832028> .
<http://webisa.webdatacommons.org/prov/236694232>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/268832028> .
<http://webisa.webdatacommons.org/268832028>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.de> .
<http://webisa.webdatacommons.org/268832028>	<http://www.w3.org/ns/prov#value>	"In general, a metal nitride such as TiN, TaN or WN has been widely used as the barrier metal layer of semiconductor devices." .