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<http://webisa.webdatacommons.org/27097538>	<http://www.w3.org/ns/prov#value>	"Figure 12(b) shows the inject polarized spin from one FM contact; other FM contact is analyzer, and modulates current by modifying spin precession via Rashba effect, Asymmetry-spin-orbit interact.Figure 12: (a) Magnetic radom access memory (IBM), (b) spin transistor.Finding a replacement for flash technology, which is used in cell phones, memory cards in digital cameras, and other devices, is an u" .
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