<http://webisa.webdatacommons.org/prov/29577539>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/27191535> .
<http://webisa.webdatacommons.org/27191535>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/27191535>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.es> .
<http://webisa.webdatacommons.org/27191535>	<http://www.w3.org/ns/prov#value>	"Titanium nitride layers can be used, for example, as a diffusion barrier in aluminum-based metallization; [0047] (4) Metal layers, such as Ta or Ti, can be deposited on appropriate substrates employing the apparatus of this invention." .
<http://webisa.webdatacommons.org/prov/30872709>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/27191535> .