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<http://webisa.webdatacommons.org/prov/248779557>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/275403472> .
<http://webisa.webdatacommons.org/275403472>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.co.in> .
<http://webisa.webdatacommons.org/275403472>	<http://www.w3.org/ns/prov#value>	"FIG. 20a is a fragmentary plan view of a planar swap gate structure in accordance with the present invention, wherein the offset photoresist pattern aligned therewith to define the composite second mask for patterning the non-magnetic electrically conductive material comprising the lower metallization level is shown in dashed lines;" .