<http://webisa.webdatacommons.org/302561128> <http://www.w3.org/1999/02/22-rdf-syntax-ns#type> <http://www.w3.org/ns/prov#Entity> . <http://webisa.webdatacommons.org/302561128> <http://www.w3.org/ns/prov#wasQuotedFrom> <google.com> . <http://webisa.webdatacommons.org/prov/448975885> <http://www.w3.org/ns/prov#wasDerivedFrom> <http://webisa.webdatacommons.org/302561128> . <http://webisa.webdatacommons.org/302561128> <http://www.w3.org/ns/prov#value> "The first step (block 460 of FIG. 40) is to perform the toroidal plasma source CVD process of FIG. 10 to deposit a transparent amorphous carbon layer 462 on an underlayer or semiconductor base 464 depicted in FIG. 41A. In a preferred embodiment, the amorphous carbon layer contains species other than carbon (e.g., fluorine, hydrogen, and the like) in proportions that render the amorphous carbon lay" .