. . . "The step of forming the metal layer 200 may include, for example, depositing a metal layer on the substrate 10 and removing portions of the metal layer disposed outside the opening 114, wherein the bottom electrode comprises, for example, a conductive material such as TiN, Ru, Pt or TaN. Next, the capacitor dielectric layer 124 is formed, wherein the capacitor dielectric layer 124 comprises, for e" . .