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<http://webisa.webdatacommons.org/302917288>	<http://www.w3.org/ns/prov#value>	"The invention claimed herein was made subject to and as a result of a joint research agreement between Infineon Technologies AG, Chartered Semiconductor Manufacturing Ltd., and International Business MachinesCorporation.TECHNICAL FIELDThis invention relates generally to semiconductor devices and methods, and more particularly to a strained semiconductor device and a method of making the same.BACKG" .
<http://webisa.webdatacommons.org/prov/387627506>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/302917288> .