<http://webisa.webdatacommons.org/303288372>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/303288372>	<http://www.w3.org/ns/prov#value>	"The present invention relates to a method and an apparatus for measuring an ion beam inclination of an ion implantation apparatus for manufacturing a semiconductor device, and more particularly to a method and an apparatus for measuring an inclination angle of an ion beam by using ions implanted into an ion current." .
<http://webisa.webdatacommons.org/303288372>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/397891953>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/303288372> .
<http://webisa.webdatacommons.org/prov/132349032>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/303288372> .