. . . "The method further involves etching a portion of the polysilicon from a gate of the p-type transistor, depositing a low resistance material (e.g., Co, Ni, Ti, or other similar metals) on the n-type transistor and the p-type transistor, and heating the integrated circuit such that the deposited material reacts with the polysilicon of the n-type transistor and the polysilicon of the p-type transisto" . .