<http://webisa.webdatacommons.org/311894217>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/332731212>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/311894217> .
<http://webisa.webdatacommons.org/311894217>	<http://www.w3.org/ns/prov#value>	"FIGS. 3A and 3B are a sectional view and a plan view, of a peripheral transistor in a semiconductor device manufactured by a method according to a second embodiment of the present invention; and" .
<http://webisa.webdatacommons.org/311894217>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .