. . . "Furthermore, exemplary oxide-nitride materials for gate dielectric layer 407 may be represented empirically by the formula A(n+1)BnO(3n+1)???xNx, wherein n is an integer and A and B are metallic and/or semi-metallic elements such as those listed above in connection with M. Such materials may include, for example: SrTiO3???xNx, SrZrO3???xNx, LaAlO3???xNx, and combinations thereof, wherein 0 . .