<http://webisa.webdatacommons.org/331743720>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.fr> .
<http://webisa.webdatacommons.org/prov/396589680>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/331743720> .
<http://webisa.webdatacommons.org/331743720>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
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