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<http://webisa.webdatacommons.org/332173769>	<http://www.w3.org/ns/prov#value>	"uctor deviceUS20080093677 *Dec 28, 2006Apr 24, 2008Samsung Electronics Co., Ltd.Semiconductor devices and methods of fabricating the sameUS20080157365 *Dec 27, 2006Jul 3, 2008Andrew OttTransistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method thereforUS20090321822 *Apr 16, 2007Dec 31, 2009Austriamicrosystems AgHigh-voltage transistor w" .
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