<http://webisa.webdatacommons.org/prov/455805336>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/360074348> .
<http://webisa.webdatacommons.org/360074348>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/360074348>	<http://www.w3.org/ns/prov#value>	"In FIG. 10A, a second interlayer insulating film 158 is formed in accordance with the process in Embodiment 1, and an insulating film 212 is formed thereon from a material such as a silicon nitride film, a silicon oxide film or a silicon nitride oxide film." .
<http://webisa.webdatacommons.org/prov/297664326>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/360074348> .
<http://webisa.webdatacommons.org/360074348>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .