<http://webisa.webdatacommons.org/prov/238473808>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/36148738> .
<http://webisa.webdatacommons.org/36148738>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/36148738>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freepatentsonline.com> .
<http://webisa.webdatacommons.org/36148738>	<http://www.w3.org/ns/prov#value>	"In one embodiment, diffusion barrier layers, such as TiN, GeTe, or other suitable material, is deposited between adjacent phase change material layers 204a-204c, and/or between phase change material layer stack 204a-204c and first electrode 202, and/or between phase change material layer stack 204a-204c and second electrode 206." .
<http://webisa.webdatacommons.org/prov/469529102>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/36148738> .