<http://webisa.webdatacommons.org/363724771>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/363724771>	<http://www.w3.org/ns/prov#value>	"FIGS. 12A and 12B are a plan view and a cross-sectional view, respectively, illustrating a third mask process in a method of fabricating the thin film transistor substrate according to the second embodiment of the present invention." .
<http://webisa.webdatacommons.org/prov/246033722>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/363724771> .
<http://webisa.webdatacommons.org/363724771>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/248508804>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/363724771> .