<http://webisa.webdatacommons.org/prov/54317827>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/38409607> .
<http://webisa.webdatacommons.org/prov/213248117>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/38409607> .
<http://webisa.webdatacommons.org/38409607>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/38409607>	<http://www.w3.org/ns/prov#value>	"The implant process 38 may employ a lightly-doped doping (LDD) step and an optional pocket implant step, wherein the lightly-doped doping (LDD) step and a pocket implant step are conducted perpendicular to the surface of the substrate 10 and employ, for example, P-type dopants such as boron (B) or BF2." .
<http://webisa.webdatacommons.org/38409607>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .