<http://webisa.webdatacommons.org/prov/507170570>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/390897290> .
<http://webisa.webdatacommons.org/prov/152940935>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/390897290> .
<http://webisa.webdatacommons.org/390897290>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freshpatents.com> .
<http://webisa.webdatacommons.org/390897290>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/390897290>	<http://www.w3.org/ns/prov#value>	"Needless to say, a substrate formed from a compound semiconductor such as gallium arsenide or indium phosphide may be used." .