<http://webisa.webdatacommons.org/392726516>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/507170570>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/392726516> .
<http://webisa.webdatacommons.org/prov/152940935>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/392726516> .
<http://webisa.webdatacommons.org/392726516>	<http://www.w3.org/ns/prov#value>	"Alternatively, a crystalline semiconductor layer of germanium or a compound semiconductor such as gallium arsenide or indium phosphide can be used." .
<http://webisa.webdatacommons.org/392726516>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<freshpatents.com> .