<http://webisa.webdatacommons.org/395505274>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/prov/353356682>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/395505274> .
<http://webisa.webdatacommons.org/prov/420534330>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/395505274> .
<http://webisa.webdatacommons.org/395505274>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/395505274>	<http://www.w3.org/ns/prov#value>	"The present invention relates to a semiconductor device using a thin film transistor (TFT) provided on an insulating substrate such as a glass substrate, and a method for fabricating the same." .