<http://webisa.webdatacommons.org/prov/348181107>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/398514812> .
<http://webisa.webdatacommons.org/398514812>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<patents.com> .
<http://webisa.webdatacommons.org/prov/141126718>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/398514812> .
<http://webisa.webdatacommons.org/398514812>	<http://www.w3.org/ns/prov#value>	"As shown in FIGS. 2 and 3, gate wires and storage wires of metal or conductive material such as aluminum (Al) or aluminum alloy, molybdenum (Mo) or molybdenum-tungsten (MoW), chromium (Cr), and tantalum (Ta) are formed on an insulating substrate" .
<http://webisa.webdatacommons.org/398514812>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/62320233>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/398514812> .