<http://webisa.webdatacommons.org/406087041>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/337149347>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/406087041> .
<http://webisa.webdatacommons.org/prov/337963166>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/406087041> .
<http://webisa.webdatacommons.org/406087041>	<http://www.w3.org/ns/prov#value>	"The present invention relates to a semiconductor device using a crystalline semiconductor (inclusive of a single crystal and a non-single crystal) formed on an insulating substrate such as a glass substrate, quartz substrate, silicon wafer, and the like, and to a method of manufacturing the same." .
<http://webisa.webdatacommons.org/406087041>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.co.uk> .
<http://webisa.webdatacommons.org/prov/288195952>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/406087041> .