<http://webisa.webdatacommons.org/prov/464635632>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/422105186> .
<http://webisa.webdatacommons.org/422105186>	<http://www.w3.org/ns/prov#value>	"As described above, in the semiconductor device having the multi-layer wiring structure, when gold is plated, a refractory metal such as Ti is evaporated so as to improve the adhesion of gold to the CVD passivation film." .
<http://webisa.webdatacommons.org/422105186>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/422105186>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com.au> .