. "FIG. 21A is a plan view showing a ferroelectric memory having a ferroelectric capacitor according to Example 7, and FIG. 21B is a sectional view taken along a line B--B of FIG. 21A. Referring to FIGS. 21A and 21B, reference numeral 101 denotes, e.g., a p-type silicon substrate, and a field oxide film 102 for electrically isolating element regions is formed on the surface of the substrate 101." . . .