<http://webisa.webdatacommons.org/prov/137763997>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/63941858> .
<http://webisa.webdatacommons.org/63941858>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/63941858>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.fr> .
<http://webisa.webdatacommons.org/prov/310807188>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/63941858> .
<http://webisa.webdatacommons.org/63941858>	<http://www.w3.org/ns/prov#value>	"Embodiments of the present invention can encompass semiconductor devices such as MOS transistors, capacitors and the like." .
<http://webisa.webdatacommons.org/prov/253619821>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/63941858> .