<http://webisa.webdatacommons.org/65053313>	<http://www.w3.org/ns/prov#value>	"for driving a word line of the memory cell array in accordance with an output from the row decoder 302A. In the case of a NAND type EEPROM of a type according to this embodiment, the word line is a selection gate and a control gate." .
<http://webisa.webdatacommons.org/65053313>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<patents.com> .
<http://webisa.webdatacommons.org/prov/217112330>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/65053313> .
<http://webisa.webdatacommons.org/65053313>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/2712038>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/65053313> .