<http://webisa.webdatacommons.org/prov/253619806>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/66765952> .
<http://webisa.webdatacommons.org/66765952>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/137763997>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/66765952> .
<http://webisa.webdatacommons.org/66765952>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.es> .
<http://webisa.webdatacommons.org/66765952>	<http://www.w3.org/ns/prov#value>	"FIGS. 5A-5C correspond to process 400 to illustrate the formation of a dielectric material used in a semiconductor device, such as a transistor or a capacitor." .