<http://webisa.webdatacommons.org/68699293>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<google.com> .
<http://webisa.webdatacommons.org/68699293>	<http://www.w3.org/ns/prov#value>	"It is known that a dielectric film comprised of a metal oxide, such as aluminum oxide (Al2O3), tantalum oxide (Ta2O5), or zirconium oxide (ZrO2), contains a number of traps, and therefore it can be used in a MONOS-type or MNOS-type memory device as a film having charge storage ability." .
<http://webisa.webdatacommons.org/prov/92854104>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/68699293> .
<http://webisa.webdatacommons.org/68699293>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .