<http://webisa.webdatacommons.org/94107085>	<http://www.w3.org/ns/prov#wasQuotedFrom>	<patents.com> .
<http://webisa.webdatacommons.org/94107085>	<http://www.w3.org/ns/prov#value>	"The device of claim 1 wherein the gate electrode material is polycrystalline silicon and the work function adjust layer is a refractory metal selected from the group consisting of titanium, molybdenum, tungsten and cobalt." .
<http://webisa.webdatacommons.org/94107085>	<http://www.w3.org/1999/02/22-rdf-syntax-ns#type>	<http://www.w3.org/ns/prov#Entity> .
<http://webisa.webdatacommons.org/prov/373956480>	<http://www.w3.org/ns/prov#wasDerivedFrom>	<http://webisa.webdatacommons.org/94107085> .