ory devices based on electric field programmable films* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS8288197 *Apr 25, 2006Oct 16, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layerCN101615622BJul 24, 2009Jun 22, 2011????????????St