For instance, U.S. Pat. No. 5,139,825 discloses the deposition of titanium nitride from TDMAT or TDEAT in reaction with ammonia under chemical vapor deposition (CVD) conditions of 100 to 400??? C., preferably 150 to 300??? C., most preferably 200 to 250??? C., under reduced pressure and using an inert carrier gas, such as nitrogen or helium, to deposit titanium nitride on a heated substrate, such