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  • 3029 oct. 200128 mars 2002Micron Technology, Inc.Surface-area-enhanced ruthenium electrically conductive layer that has improved compatibility with high-dielectric constant dielectric materials; heating ruthenium oxideUS200200488808 ao???t 200125 avr. 2002Joo-Won LeeMethod of manufacturing a semiconductor device including metal contact and capacitorUS200200520973 mai 20012 mai 2002Park Young-HoonA
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