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  • on with a shielding electrode outside an active cell array and a reduced gate-drain capacitanceUS6750116 *Jul 14, 2003Jun 15, 2004Nanya Technology Corp.Method for fabricating asymmetric inner structure in contacts or trenchesUS7470588 *Mar 22, 2006Dec 30, 2008Samsung Electronics Co., Ltd.Transistors including laterally extended active regions and methods of fabricating the sameUS7473603Nov 12, 200
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