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  • Continuing with FIG. 7, structure 700 illustrates that, by the deposition of P type silicon-germanium layer 714 in gaps 705 and 707 (and the addition and formation of junctions and other structures not shown), a lateral silicon-germanium PNP HBT is formed wherein silicon-germanium layer 714 functions as the P type emitter, well 708 functions as the N type base and implant 726 functions as the P ty
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