For example, metals or other structures can be applied onto a film prepared from dielectric or semiconducting material (e.g. metal oxides) by using the processes described in U.S. Pat. No. 2002/106447, WO 99/35312, WO 01/27690, U.S. Pat. No. 6,301,038 and WO 2004/011672, or organic molecule layer can be applied onto the film by the SAM (self-assembled monolayer) method.