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  • The substrate 210, as described above, is formed by using a transparent material preferably including sapphire as a substrate suitable for growing a nitride semiconductor single crystal and it can be formed by using a material such as zinc oxide (ZnO), gallium nitride (GaN), gallium arsenide (GaAs), silicon, silicon carbide (SiC), aluminum nitride (AlN) or the like in place of the sapphire.
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