prov:value
| - The memory system of claim 1, wherein the at least one metal oxynitride barrier layer comprises MOxNy, wherein M is a metal selected from the group consisting of: chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium.
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