This may be a phosphorus implant at a dosage of 10 exp 14 to 10 exp 15 per sq. cm., at 100 KeV. An anneal step drives in the phosphorus of the regions 20 to create the N+ source and drain regions 14 of FIG. 1; this anneal may be at 900??? C. for 11/2 hours in an inert atmosphere such as argon, for example.