As also shown in FIG. 14, conductive traces 80 may be formed on the substrate 12 to provide a conductive path in electrical contact with the silicide layer 78A. The conductive traces 80 are formed by depositing and etching a second metal layer comprising a highly conductive metal such as aluminum, copper or alloys thereof, or a refractory metal such as titanium, tungsten, tantalum and molybdenum o