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  • It has been found that silicon oxide layers can be deposited at high rates and low dielectric precursor pressures on a substrate by evacuating a chamber, introducing into the chamber the substrate, oxygen and a dielectric precursor which has the formula ##STR3## wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, --CH3 and --C2 H5, and activating
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