ting of a p-type AlzGa1-zN (0<z<1, 2x<z, where z=0.15 for example), and a contact layer (cap layer) 7 of approximately 0.3 to 2 ??m consisting of a p-type GaN are laminated in order, a p-side electrode 8 consisting of a metal such as Au is formed on the contact layer 7, an n-side electrode 9 consisting of a metal such as Al is formed on the high temperature buffer layer 3 wherein a part of the lam