prov:value
| - ts deposit 3015 insulating material layer 3115' such material may be SiO.sub.2, Si.sub.3N.sub.4, Al.sub.2O.sub.3, or other insulating materials, for example, as illustrated in FIG. 25AX.Next, preferred embodiments CMP etch then directly etch 3017 insulating layer 3115' exposing first sacrificial layer 3108X, silicon, for example, and forming coplanar insulating layer 3115'', SiO.sub.2 or Si.sub.3N
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