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  • At the stage of the assembly process illustrated in FIG. 1, TFT body 130 comprises a gate electrode 132 (typically comprising a conductive material such as chromium, titanium, molybdenum, aluminum, or the like); a gate dielectric layer 134 disposed thereover (and typically comprising an inorganic dielectric material such as silicon nitride or silicon dioxide); a semiconductor material layer 136 di
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