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  • At this time, when the developing properties of the photoresist film 13 are poor, good developing properties may be secured by performing a dry etching process using a plasma surface processing technique to the photoresist film 13. [0067] As shown in FIG. 10A, the plating feed layer metal film 8 is used as a feed layer, the metal post electrode 15 consisting of a metal material such as Cu or Ni is
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